Vishay Precision Group FETs - Single - SIS476DN-T1-GE3 SIS476DN-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 716224-SIS476DN-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PowerPAK 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK 1212-8 Power Dissipation (Maximum): 3.7W, 52W Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 40A Rds On (Maximum) at Id, Vgs: 2.5mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 77nC at 10V Gate Source Voltage (Maximum): +20V, -16V Input Capacitance (Ciss) (Maximum) at Vds: 3595pF at 15V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 716224-SIS476DN-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PowerPAK 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK 1212-8 Power Dissipation (Maximum): 3.7W, 52W Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 40A Rds On (Maximum) at Id, Vgs: 2.5mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 77nC at 10V Gate Source Voltage (Maximum): +20V, -16V Input Capacitance (Ciss) (Maximum) at Vds: 3595pF at 15V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - SIS476DN-T1-GE3 - 716224-SIS476DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SIS476DN-T1-GE3
716224-SIS476DN-T1-GE3
FETs - Single - SIS476DN-T1-GE3 716224-SIS476DN-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 716224-SIS476DN-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PowerPAK 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK 1212-8 Power Dissipation (Maximum): 3.7W, 52W Popularity: Low Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 40A Rds On (Maximum) at Id, Vgs: 2.5mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.3V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 77nC at 10V Gate Source Voltage (Maximum): +20V, -16V Input Capacitance (Ciss) (Maximum) at Vds: 3595pF at 15V

Manufacturer: Vishay Siliconix
Win Source Part Number: 716224-SIS476DN-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK 1212-8
Power Dissipation (Maximum): 3.7W, 52W
Popularity: Low
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 40A
Rds On (Maximum) at Id, Vgs: 2.5mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 77nC at 10V
Gate Source Voltage (Maximum): +20V, -16V
Input Capacitance (Ciss) (Maximum) at Vds: 3595pF at 15V

Buy Now
Single FETs, MOSFETs - SIS476DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS476DN-T1-GE3CT-ND
Single FETs, MOSFETs SIS476DN-T1-GE3CT-ND
N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS476DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS476DN-T1-GE3DKR-ND
Single FETs, MOSFETs SIS476DN-T1-GE3DKR-ND
N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS476DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS476DN-T1-GE3TR-ND
Single FETs, MOSFETs SIS476DN-T1-GE3TR-ND
N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Singapore
N-Channel SMD 30V 40A MOSFET Transistor
278-SIS476DN-T1-GE3
N-Channel SMD 30V 40A MOSFET Transistor 278-SIS476DN-T1-GE3
N-Ch MOSFET 30V 2.5mR 40A N-Channel Surface Mount Product overview: SIS476DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS476DN-T1-GE3 can be used for catalog matching and distributor lookup.

N-Ch MOSFET 30V 2.5mR 40A N-Channel Surface Mount Product overview: SIS476DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS476DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIS476DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS476DN-T1-GE3
Single FETs, MOSFETs SIS476DN-T1-GE3
MOSFET N-CH 30V 40A PPAK1212-8

MOSFET N-CH 30V 40A PPAK1212-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8

MOSFET 30V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS476DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS476DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS476DN-T1-GE3
MOSFET N-CH 30V 40A PPAK1212-8

MOSFET N-CH 30V 40A PPAK1212-8

Supplier's Site
Mosfet, N Channel, 30V, 40A, Powerpak 1212-8; Channel Type Vishay - 68W7093 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 40A, Powerpak 1212-8; Channel Type Vishay
68W7093
Mosfet, N Channel, 30V, 40A, Powerpak 1212-8; Channel Type Vishay 68W7093
MOSFET, N CHANNEL, 30V, 40A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 40A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Ch, 30V, 40A, Powerpak 1212-8, Full Reel; Channel Type Vishay - 68W7094 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 40A, Powerpak 1212-8, Full Reel; Channel Type Vishay
68W7094
Mosfet, N Ch, 30V, 40A, Powerpak 1212-8, Full Reel; Channel Type Vishay 68W7094
MOSFET, N CH, 30V, 40A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes

MOSFET, N CH, 30V, 40A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 716224-SIS476DN-T1-GE3 SIS476DN-T1-GE3CT-ND 278-SIS476DN-T1-GE3 SIS476DN-T1-GE3 SIS476DN-T1-GE3 SIS476DN-T1-GE3 68W7093 68W7094
Product Name FETs - Single - SIS476DN-T1-GE3 Single FETs, MOSFETs N-Channel SMD 30V 40A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 30V, 40A, Powerpak 1212-8; Channel Type Vishay Mosfet, N Ch, 30V, 40A, Powerpak 1212-8, Full Reel; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 3700 to 52000 milliwatts 52000 milliwatts 3700 milliwatts 52000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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