N-Channel MOSFET, 80V, 30A, 19.5mR Rds(on), Surface Mount Product overview: SIS468DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 80V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 80V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS468DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 30A PPAK1212-8
N-Channel 80V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 80V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 80V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 895107-SIS468DN-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 80 V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIS468
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIS468DN-T1-GE3TR, SIS468DN-T1-GE3CT, SIS468DN-T1-GE3DKR, SIS468DNT1GE3
MOSFET N-Ch 80V 9.8A PowerPAK 1212-8
MOSFET N-Ch 80V 9.8A PowerPAK 1212-8
MOSFET N-Ch 80V 9.8A PowerPAK 1212-8
MOSFET 80V Vds 20V Vgs PowerPAK 1212-8
MOSFET N-CH 80V 30A PPAK1212-8
N-CHANNEL 80 -V (D-S) MOSFET
MOSFET Transistor, N Channel, 30 A, 80 V, 0.016 ohm, 10 V, 1.5 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIS468DN-T1-GE3 | SIS468DN-T1-GE3 | SIS468DN-T1-GE3CT-ND | 895107-SIS468DN-T1-GE3 | 7879383 | 7879383P | SIS468DN-T1-GE3 | SIS468DN-T1-GE3 | 26AK9911 |
| Product Name | N-Channel SMD 80V 30A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS468DN-T1-GE3 | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N-Channel 80 -V (D-S) Mosfet Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 52000 milliwatts | 3700 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 80 volts |
