Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS456DN-T1-GE3 SIS456DN-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 028776-SIS456DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 1800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.1 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TPN4R203NC,L1Q; SiS456DN; SiS456DN-T1-GE3; NVTFS4C08NWFTAG;
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

N-Channel 30V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8