Manufacturer: Vishay
Win Source Part Number: 064668-SIS454DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 1900pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET N-CH 20V 35A 1212-8 PPAK Product overview: SIS454DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS454DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 20V 35A PPAK1212-8
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
MOSFET,N CHANNEL,DIODE,20V,35
MOSFET,N CHANNEL,DIODE,20V,35
MOSFET,N CH,DIODE,20V,35A,PPA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064668-SIS454DN-T1-GE3 | 278-SIS454DN-T1-GE3 | SIS454DN-T1-GE3DKR-ND | SIS454DN-T1-GE3 | SIS454DN-T1-GE3 | 87W5910 | 23T8487 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS454DN-T1-GE3 | 20V 35A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet,n Channel,diode,20V,35A,ppak1212-8; Transistor Polarity Vishay | Mosfet,n Ch,diode,20V,35A,ppak1212-8; Transistor Polarity Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | ||||||
| PD | 3800 to 52000 milliwatts | 52000 milliwatts | 3800 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
