Vishay Intertechnology, Inc. Single FETs, MOSFETs SIS439DNT-T1-GE3

Description
P-Channel 30V 50A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8S
Request a Quote Datasheet
Description
P-Channel 30V 50A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8S
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIS439DNT-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS439DNT-T1-GE3TR-ND
Single FETs, MOSFETs SIS439DNT-T1-GE3TR-ND
P-Channel 30V 50A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8S

P-Channel 30V 50A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS439DNT-T1-GE3 - 1096499-SIS439DNT-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS439DNT-T1-GE3
1096499-SIS439DNT-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS439DNT-T1-GE3 1096499-SIS439DNT-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096499-SIS439DNT-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 68nC @ 10V Max Input Capacitance: 2135pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): DMG7401SFGQ-13; SiS427EDN-T1-GE3; Si7617DN-T1-GE3; Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096499-SIS439DNT-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 68nC @ 10V
Max Input Capacitance: 2135pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): DMG7401SFGQ-13; SiS427EDN-T1-GE3; Si7617DN-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS439DNT-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS439DNT-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS439DNT-T1-GE3
MOSFET P-CH 30V 50A PPAK1212-8S

MOSFET P-CH 30V 50A PPAK1212-8S

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIS439DNT-T1-GE3TR-ND 1096499-SIS439DNT-T1-GE3 SIS439DNT-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS439DNT-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type PowerPAK® 1212-8S SOT3; PowerPAK 1212-8 2135 pF @ 15 V
V(BR)DSS 30 volts
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