Vishay Precision Group Channel Type Vishay SIS438DN-T1-GE3.

Description
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:14.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V; Power Dissipation:27.7W; No. of Pins:8Pins RoHS Compliant: No
Description
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:14.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V; Power Dissipation:27.7W; No. of Pins:8Pins RoHS Compliant: No
Datasheet
Datasheet Summary
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The SiS438DN is an N-channel 20-V MOSFET designed for DC/DC and point-of-load conversion applications. It is packaged in a PowerPAK 1212-8 surface-mount case measuring 3.30 mm × 3.30 mm. The device has a drain-source on-state resistance of 0.0095 Ω at 10 V gate-source voltage and 0.0125 Ω at 4.5 V, with a continuous drain current of 16 A at 25 °C case temperature and 14.3 A at 25 °C ambient temperature. It supports a pulsed drain current of 32 A and has a maximum power dissipation of 27.7 W at 25 °C case temperature. The MOSFET is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21. Junction and storage temperatures range from -55 °C to 150 °C.

Datasheet Summary
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The SiS438DN is an N-channel 20-V MOSFET designed for DC/DC and point-of-load conversion applications. It is packaged in a PowerPAK 1212-8 surface-mount case measuring 3.30 mm × 3.30 mm. The device has a drain-source on-state resistance of 0.0095 Ω at 10 V gate-source voltage and 0.0125 Ω at 4.5 V, with a continuous drain current of 16 A at 25 °C case temperature and 14.3 A at 25 °C ambient temperature. It supports a pulsed drain current of 32 A and has a maximum power dissipation of 27.7 W at 25 °C case temperature. The MOSFET is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21. Junction and storage temperatures range from -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
Channel Type Vishay - 28AC2114 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Vishay
28AC2114
Channel Type Vishay 28AC2114
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:14.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V; Power Dissipation:27.7W; No. of Pins:8Pins RoHS Compliant: No

Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:14.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V; Power Dissipation:27.7W; No. of Pins:8Pins RoHS Compliant: No

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 28AC2114
Product Name Channel Type Vishay
Package Type TO-3
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