Manufacturer: Vishay
Win Source Part Number: 1096498-SIS438DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 880pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
SIS438DN-T1-GE3 N-channel MOSFET Transistor; 14.3 A; 20 V; 8-Pin PowePAK 1212 Product overview: SIS438DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 14.3 A, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 14.3 A, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS438DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET, N-CH, 20V, 16A, POWERPAK 1212 ROHS COMPLIANT: YES
MOSFET N-CH 20V 16A PPAK 1212-8
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
MOSFET N-CH 20V 16A PPAK 1212-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096498-SIS438DN-T1-GE3 | 278-SIS438DN-T1-GE3 | SIS438DN-T1-GE3CT-ND | 57AJ0413 | SIS438DN-T1-GE3 | SIS438DN-T1-GE3 | SIS438DN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS438DN-T1-GE3 | N-Channel 14.3 A 20 V MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 16A, Powerpak 1212 Rohs Compliant Vishay | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 3500 to 27700 milliwatts | 27700 milliwatts | 3500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
