Vishay Precision Group Single FETs, MOSFETs SIS438DN-T1-GE3

N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

SIS438DN-T1-GE3 N-channel MOSFET Transistor; 14.3 A; 20 V; 8-Pin PowePAK 1212 Product overview: SIS438DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 14.3 A, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 14.3 A, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS438DN-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1096498-SIS438DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 880pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient