Vishay Precision Group Single FETs, MOSFETs SIS438DN-T1-GE3

Description
N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIS438DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS438DN-T1-GE3CT-ND
Single FETs, MOSFETs SIS438DN-T1-GE3CT-ND
N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS438DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS438DN-T1-GE3TR-ND
Single FETs, MOSFETs SIS438DN-T1-GE3TR-ND
N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS438DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS438DN-T1-GE3DKR-ND
Single FETs, MOSFETs SIS438DN-T1-GE3DKR-ND
N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 20V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Singapore
N-Channel 14.3 A 20 V MOSFET Transistor
278-SIS438DN-T1-GE3
N-Channel 14.3 A 20 V MOSFET Transistor 278-SIS438DN-T1-GE3
SIS438DN-T1-GE3 N-channel MOSFET Transistor; 14.3 A; 20 V; 8-Pin PowePAK 1212 Product overview: SIS438DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 14.3 A, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 14.3 A, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS438DN-T1-GE3 can be used for catalog matching and distributor lookup.

SIS438DN-T1-GE3 N-channel MOSFET Transistor; 14.3 A; 20 V; 8-Pin PowePAK 1212 Product overview: SIS438DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 14.3 A, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 14.3 A, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS438DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS438DN-T1-GE3 - 1096498-SIS438DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS438DN-T1-GE3
1096498-SIS438DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS438DN-T1-GE3 1096498-SIS438DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096498-SIS438DN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 2.3V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 880pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096498-SIS438DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 880pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8

MOSFET 20V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet
Mosfet, N-Ch, 20V, 16A, Powerpak 1212 Rohs Compliant Vishay - 57AJ0413 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 16A, Powerpak 1212 Rohs Compliant Vishay
57AJ0413
Mosfet, N-Ch, 20V, 16A, Powerpak 1212 Rohs Compliant Vishay 57AJ0413
MOSFET, N-CH, 20V, 16A, POWERPAK 1212 ROHS COMPLIANT: YES

MOSFET, N-CH, 20V, 16A, POWERPAK 1212 ROHS COMPLIANT: YES

Supplier's Site
Single FETs, MOSFETs - SIS438DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS438DN-T1-GE3
Single FETs, MOSFETs SIS438DN-T1-GE3
MOSFET N-CH 20V 16A PPAK 1212-8

MOSFET N-CH 20V 16A PPAK 1212-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS438DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS438DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS438DN-T1-GE3
MOSFET N-CH 20V 16A PPAK 1212-8

MOSFET N-CH 20V 16A PPAK 1212-8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIS438DN-T1-GE3CT-ND 278-SIS438DN-T1-GE3 1096498-SIS438DN-T1-GE3 SIS438DN-T1-GE3 57AJ0413 SIS438DN-T1-GE3 SIS438DN-T1-GE3
Product Name Single FETs, MOSFETs N-Channel 14.3 A 20 V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS438DN-T1-GE3 MOSFET Mosfet, N-Ch, 20V, 16A, Powerpak 1212 Rohs Compliant Vishay Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 TO-3 PowerPAK® 1212-8 PowerPAKR 1212-8
PD 27700 milliwatts 3500 to 27700 milliwatts 3500 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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