Vishay Intertechnology, Inc. Single FETs, MOSFETs SIS435DNT-T1-GE3

Description
MOSFET P-CH 20V 30A PPAK1212-8
Request a Quote Datasheet
Description
MOSFET P-CH 20V 30A PPAK1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIS435DNT-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS435DNT-T1-GE3
Single FETs, MOSFETs SIS435DNT-T1-GE3
MOSFET P-CH 20V 30A PPAK1212-8

MOSFET P-CH 20V 30A PPAK1212-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SIS435DNT-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS435DNT-T1-GE3DKR-ND
Single FETs, MOSFETs SIS435DNT-T1-GE3DKR-ND
P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS435DNT-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS435DNT-T1-GE3TR-ND
Single FETs, MOSFETs SIS435DNT-T1-GE3TR-ND
P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS435DNT-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS435DNT-T1-GE3CT-ND
Single FETs, MOSFETs SIS435DNT-T1-GE3CT-ND
P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Electronic Surplus - SIS435DNT-T1-GE3 - 720374-SIS435DNT-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - SIS435DNT-T1-GE3
720374-SIS435DNT-T1-GE3
Electronic Surplus - SIS435DNT-T1-GE3 720374-SIS435DNT-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 720374-SIS435DNT-T1- GE3 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PowerPAK 1212-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK 1212-8 Power Dissipation (Maximum): 3.7W, 39W Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 30A Rds On (Maximum) at Id, Vgs: 5.4mOhm at 13A, 4.5V Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 8V Gate Source Voltage (Maximum): ±8V Input Capacitance (Ciss) (Maximum) at Vds: 5700pF at 10V

Manufacturer: Vishay Siliconix
Win Source Part Number: 720374-SIS435DNT-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK 1212-8
Power Dissipation (Maximum): 3.7W, 39W
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 30A
Rds On (Maximum) at Id, Vgs: 5.4mOhm at 13A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 180nC at 8V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 5700pF at 10V

Buy Now
Singapore
20V 30A MOSFET Transistor
278-SIS435DNT-T1-GE3
20V 30A MOSFET Transistor 278-SIS435DNT-T1-GE3
MOSFET P-CH 20V 30A 1212-8 Product overview: SIS435DNT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS435DNT-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 30A 1212-8 Product overview: SIS435DNT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS435DNT-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T

MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS435DNT-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS435DNT-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS435DNT-T1-GE3
MOSFET P-CH 20V 30A PPAK1212-8

MOSFET P-CH 20V 30A PPAK1212-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIS435DNT-T1-GE3 SIS435DNT-T1-GE3DKR-ND 720374-SIS435DNT-T1-GE3 278-SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 SIS435DNT-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Electronic Surplus - SIS435DNT-T1-GE3 20V 30A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 30000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details
GaAs Fet Switches - KS202 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 94-2310 - Shenzhen Shengyu Electronics Technology Limited
Specs
Package Type -55degC ~ 175degC (TJ)
Packing Method Tube; Tube
View Details