MOSFET P-CH 20V 30A PPAK1212-8
P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Win Source Part Number: 720374-SIS435DNT-T1-
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK 1212-8
Power Dissipation (Maximum): 3.7W, 39W
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 30A
Rds On (Maximum) at Id, Vgs: 5.4mOhm at 13A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 180nC at 8V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 5700pF at 10V
MOSFET P-CH 20V 30A 1212-8 Product overview: SIS435DNT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS435DNT-T1-GE3
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
MOSFET P-CH 20V 30A PPAK1212-8
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIS435DNT-T1-GE3 | SIS435DNT-T1-GE3DKR-ND | 720374-SIS435DNT-T1-GE3 | 278-SIS435DNT-T1-GE3 | SIS435DNT-T1-GE3 | SIS435DNT-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Electronic Surplus - SIS435DNT-T1-GE3 | 20V 30A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 30000 milliamps |