N-CH MOSFET 40V 35A 7.6mR TO-252 1.17mm Product overview: SIS434DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 35A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 35A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS434DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 40V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 064666-SIS434DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Family Name: SiS434DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1530pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.6 mOhm @ 16.2A, 10V
Alternative Parts (Cross-Reference): TPCC8069,L1Q(O; NVTFS5C471NLWFTAG ; NTTFS5C471NLTAG; NVTFS5C471NLTAG;
Introduction Date: June 21, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
N CHANNEL MOSFET, 40V, 35A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
MOSFET,N CH,40V,35A,POWERPAK;
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
MOSFET N-CH 40V 35A PPAK 1212-8
MOSFET N-CH 40V 35A PPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIS434DN-T1-GE3 | SIS434DN-T1-GE3CT-ND | 064666-SIS434DN-T1-GE3 | 35R0027 | 60AC3814 | SIS434DN-T1-GE3 | SIS434DN-T1-GE3 | SIS434DN-T1-GE3 |
| Product Name | 40V 35A TO-252 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS434DN-T1-GE3 | N Channel Mosfet, 40V, 35A, Full Reel; Channel Type Vishay | Mosfet,n Ch,40V,35A,powerpak; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 52000 milliwatts | 3800 to 52000 milliwatts | 3800 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | TO-3 | TO-3 | PowerPAKR 1212-8 | PowerPAK® 1212-8 | ||
| V(BR)DSS | 40 volts | 40 volts |
