Vishay Precision Group Single FETs, MOSFETs SIS413DN-T1-GE3

Description
P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIS413DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS413DN-T1-GE3CT-ND
Single FETs, MOSFETs SIS413DN-T1-GE3CT-ND
P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS413DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS413DN-T1-GE3DKR-ND
Single FETs, MOSFETs SIS413DN-T1-GE3DKR-ND
P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS413DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS413DN-T1-GE3TR-ND
Single FETs, MOSFETs SIS413DN-T1-GE3TR-ND
P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS413DN-T1-GE3 - 1096496-SIS413DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS413DN-T1-GE3
1096496-SIS413DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS413DN-T1-GE3 1096496-SIS413DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096496-SIS413DN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 4280pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.4 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096496-SIS413DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4280pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.4 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIS413DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS413DN-T1-GE3
Single FETs, MOSFETs SIS413DN-T1-GE3
MOSFET P-CH 30V 18A PPAK 1212-8

MOSFET P-CH 30V 18A PPAK 1212-8

Supplier's Site Datasheet
Mosfet, P-Ch, -30V, -18A, Powerpak 1212; Channel Type Vishay - 70AC6482 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -18A, Powerpak 1212; Channel Type Vishay
70AC6482
Mosfet, P-Ch, -30V, -18A, Powerpak 1212; Channel Type Vishay 70AC6482
MOSFET, P-CH, -30V, -18A, POWERPAK 1212; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET, P-CH, -30V, -18A, POWERPAK 1212; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SIS413DN-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SIS413DN-T1-GE3
30V 18A 9.4mΩ@10V,15A 2.5V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS

30V 18A 9.4mΩ@10V,15A 2.5V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS413DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS413DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS413DN-T1-GE3
MOSFET P-CH 30V 18A PPAK 1212-8

MOSFET P-CH 30V 18A PPAK 1212-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIS413DN-T1-GE3CT-ND 1096496-SIS413DN-T1-GE3 SIS413DN-T1-GE3 70AC6482 SIS413DN-T1-GE3 SIS413DN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS413DN-T1-GE3 Single FETs, MOSFETs Mosfet, P-Ch, -30V, -18A, Powerpak 1212; Channel Type Vishay Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 PowerPAK® 1212-8 TO-3 PowerPAKR 1212-8
V(BR)DSS 30 volts 30 volts 30 volts
PD 3700 to 52000 milliwatts 3700 milliwatts 3700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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