P-Channel MOSFET, 30V, -18A, 9.4mR, Surface Mount Product overview: SIS413DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 30V, -18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, -18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS413DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096496-SIS413DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4280pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.4 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 30V 18A PPAK 1212-8
30V 18A 9.4mΩ@10V,15A 2.5V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS
MOSFET, P-CH, -30V, -18A, POWERPAK 1212; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET P-CH 30V 18A PPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIS413DN-T1-GE3 | 1096496-SIS413DN-T1-GE3 | SIS413DN-T1-GE3DKR-ND | SIS413DN-T1-GE3 | SIS413DN-T1-GE3 | 70AC6482 | SIS413DN-T1-GE3 |
| Product Name | P-Channel SMD 30V -18A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS413DN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, P-Ch, -30V, -18A, Powerpak 1212; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| PD | 52000 milliwatts | 3700 to 52000 milliwatts | 3700 milliwatts | 3700 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| Package Type | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | TO-3 | PowerPAKR 1212-8 |
