30V N-CH MOSFET, 24mR Rds(on), 12A ID, 8-Pin PowerPAK Product overview: SIS412DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS412DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 30V 12A PPAK1212-8
N-Ch PowerPAK1212 30V 24mohm@10V- Lead(P
N-Ch PowerPAK1212 30V 24mohm@10V- Lead(P
N-Ch PowerPAK1212 30V 24mohm@10V- Lead(P
Manufacturer: Vishay
Win Source Part Number: 028773-SIS412DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 435pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
MOSFET N-CH 30V 12A PPAK1212-8
MOSFET, N CHANNEL, 40V, 12A, POWERPAK8; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIS412DN-T1-GE3 | SIS412DN-T1-GE3CT-ND | SIS412DN-T1-GE3 | 1807909P | 028773-SIS412DN-T1-GE3 | SIS412DN-T1-GE3 | SIS412DN-T1-GE3 | 55R1906 |
| Product Name | 30V 12A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS412DN-T1-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 40V, 12A, Powerpak8; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 15600 milliwatts | 3200 milliwatts | 3200 to 15600 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAKR 1212-8 | TO-3 |
