Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407DN-T1-GE3 SIS407DN-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028772-SIS407DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.6W (Ta), 33W (Tc) Family Name: SiS407DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 93.8nC @ 8V Max Input Capacitance: 2760pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15.3A, 4.5V Alternative Parts (Cross-Reference): DMP2008UFG-13; DMP2008UFG-7; AP2613GYT-HF; DMP2010UFV-7; Introduction Date: March 23, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 028772-SIS407DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.6W (Ta), 33W (Tc) Family Name: SiS407DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 93.8nC @ 8V Max Input Capacitance: 2760pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15.3A, 4.5V Alternative Parts (Cross-Reference): DMP2008UFG-13; DMP2008UFG-7; AP2613GYT-HF; DMP2010UFV-7; Introduction Date: March 23, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407DN-T1-GE3 - 028772-SIS407DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407DN-T1-GE3
028772-SIS407DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407DN-T1-GE3 028772-SIS407DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028772-SIS407DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.6W (Ta), 33W (Tc) Family Name: SiS407DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 93.8nC @ 8V Max Input Capacitance: 2760pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15.3A, 4.5V Alternative Parts (Cross-Reference): DMP2008UFG-13; DMP2008UFG-7; AP2613GYT-HF; DMP2010UFV-7; Introduction Date: March 23, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 028772-SIS407DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Family Name: SiS407DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 93.8nC @ 8V
Max Input Capacitance: 2760pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15.3A, 4.5V
Alternative Parts (Cross-Reference): DMP2008UFG-13; DMP2008UFG-7; AP2613GYT-HF; DMP2010UFV-7;
Introduction Date: March 23, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SIS407DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS407DN-T1-GE3
Single FETs, MOSFETs SIS407DN-T1-GE3
MOSFET P-CH 20V 25A PPAK1212-8

MOSFET P-CH 20V 25A PPAK1212-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SIS407DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS407DN-T1-GE3DKR-ND
Single FETs, MOSFETs SIS407DN-T1-GE3DKR-ND
P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS407DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS407DN-T1-GE3CT-ND
Single FETs, MOSFETs SIS407DN-T1-GE3CT-ND
P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS407DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS407DN-T1-GE3TR-ND
Single FETs, MOSFETs SIS407DN-T1-GE3TR-ND
P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Singapore
-20V -25A 33W MOSFET Transistor
278-SIS407DN-T1-GE3
-20V -25A 33W MOSFET Transistor 278-SIS407DN-T1-GE3
P-CH MOSFET, -20V, -25A, 8.2mR, 33W, SMT Product overview: SIS407DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, -25A, 33W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -25A, 33W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS407DN-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET, -20V, -25A, 8.2mR, 33W, SMT Product overview: SIS407DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, -25A, 33W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -25A, 33W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS407DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet,p Ch,diode,20V,25A,ppak1212-8; Transistor Polarity Vishay - 23T8483 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,p Ch,diode,20V,25A,ppak1212-8; Transistor Polarity Vishay
23T8483
Mosfet,p Ch,diode,20V,25A,ppak1212-8; Transistor Polarity Vishay 23T8483
MOSFET,P CH,DIODE,20V,25A,PPA K1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-25A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):8200µohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:3.6W; RoHS Compliant: Yes

MOSFET,P CH,DIODE,20V,25A,PPAK1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-25A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):8200µohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:3.6W; RoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, -20V, -25A, Powerpak-8, Full Reel; Channel Type Vishay - 86R3814 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -25A, Powerpak-8, Full Reel; Channel Type Vishay
86R3814
Mosfet, P-Ch, -20V, -25A, Powerpak-8, Full Reel; Channel Type Vishay 86R3814
MOSFET, P-CH, -20V, -25A, POWERPAK-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:33W; MSL:- RoHS Compliant: Yes

MOSFET, P-CH, -20V, -25A, POWERPAK-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:33W; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -20V, -25A, Powerpak-8; Channel Type Vishay - 09X6415 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -20V, -25A, Powerpak-8; Channel Type Vishay
09X6415
Mosfet, P Channel, -20V, -25A, Powerpak-8; Channel Type Vishay 09X6415
MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS407DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS407DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS407DN-T1-GE3
MOSFET P-CH 20V 25A PPAK1212-8

MOSFET P-CH 20V 25A PPAK1212-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8

MOSFET -20V Vds 8V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028772-SIS407DN-T1-GE3 SIS407DN-T1-GE3 SIS407DN-T1-GE3DKR-ND 278-SIS407DN-T1-GE3 23T8483 86R3814 09X6415 SIS407DN-T1-GE3 SIS407DN-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407DN-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs -20V -25A 33W MOSFET Transistor Mosfet,p Ch,diode,20V,25A,ppak1212-8; Transistor Polarity Vishay Mosfet, P-Ch, -20V, -25A, Powerpak-8, Full Reel; Channel Type Vishay Mosfet, P Channel, -20V, -25A, Powerpak-8; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 3600 to 33000 milliwatts 3600 milliwatts 33000 milliwatts 3600 milliwatts 33000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SOT3; PowerPAK 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8 TO-3 TO-3 TO-3 PowerPAKR 1212-8
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