MOSFET P-CH 20V 25A PPAK1212-8
P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8
P-CH MOSFET, -20V, -25A, 8.2mR, 33W, SMT Product overview: SIS407DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, -25A, 33W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -25A, 33W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS407DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028772-SIS407DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Family Name: SiS407DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 93.8nC @ 8V
Max Input Capacitance: 2760pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15.3A, 4.5V
Alternative Parts (Cross-Reference): DMP2008UFG-13; DMP2008UFG-7; AP2613GYT-HF; DMP2010UFV-7;
Introduction Date: March 23, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
MOSFET,P CH,DIODE,20V,25A,PPA
MOSFET, P-CH, -20V, -25A, POWERPAK-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:33W; MSL:- RoHS Compliant: Yes
MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
MOSFET P-CH 20V 25A PPAK1212-8
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIS407DN-T1-GE3 | SIS407DN-T1-GE3DKR-ND | 278-SIS407DN-T1-GE3 | 028772-SIS407DN-T1-GE3 | 23T8483 | 86R3814 | 09X6415 | SIS407DN-T1-GE3 | SIS407DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | -20V -25A 33W MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407DN-T1-GE3 | Mosfet,p Ch,diode,20V,25A,ppak1212-8; Transistor Polarity Vishay | Mosfet, P-Ch, -20V, -25A, Powerpak-8, Full Reel; Channel Type Vishay | Mosfet, P Channel, -20V, -25A, Powerpak-8; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 25000 milliamps | -25000 milliamps | 25000 milliamps | 25000 milliamps | |||||
| PD | 3600 milliwatts | 33000 milliwatts | 3600 to 33000 milliwatts | 3600 milliwatts | 33000 milliwatts |
