Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407ADN-T1-GE3 SIS407ADN-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794409-SIS407ADN-T1- GE3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK 1212-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Family Name: SiS407ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Manufacturer Package: PowerPAK 1212-8 Channel Type Type: P Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 1V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 168nC @ 8V Input Capacitance (Ciss) (Maximum) @ Vds: 5875pF @ 10V Vgs (Maximum): ±8V Power Dissipation (Maximum): 3.7W (Ta), 39.1W (Tc) Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 15A, 4.5V Alternative Parts (Cross-Reference): AP2613GYT-HF; DMP2010UFV-7; DMP2010UFV-13; FDMC510P-F106; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794409-SIS407ADN-T1- GE3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK 1212-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Family Name: SiS407ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Manufacturer Package: PowerPAK 1212-8 Channel Type Type: P Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 1V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 168nC @ 8V Input Capacitance (Ciss) (Maximum) @ Vds: 5875pF @ 10V Vgs (Maximum): ±8V Power Dissipation (Maximum): 3.7W (Ta), 39.1W (Tc) Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 15A, 4.5V Alternative Parts (Cross-Reference): AP2613GYT-HF; DMP2010UFV-7; DMP2010UFV-13; FDMC510P-F106; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407ADN-T1-GE3 - 794409-SIS407ADN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407ADN-T1-GE3
794409-SIS407ADN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407ADN-T1-GE3 794409-SIS407ADN-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 794409-SIS407ADN-T1- GE3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK 1212-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Family Name: SiS407ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Manufacturer Package: PowerPAK 1212-8 Channel Type Type: P Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 1V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 168nC @ 8V Input Capacitance (Ciss) (Maximum) @ Vds: 5875pF @ 10V Vgs (Maximum): ±8V Power Dissipation (Maximum): 3.7W (Ta), 39.1W (Tc) Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 15A, 4.5V Alternative Parts (Cross-Reference): AP2613GYT-HF; DMP2010UFV-7; DMP2010UFV-13; FDMC510P-F106; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 794409-SIS407ADN-T1-GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK 1212-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Family Name: SiS407ADN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Manufacturer Package: PowerPAK 1212-8
Channel Type Type: P
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 168nC @ 8V
Input Capacitance (Ciss) (Maximum) @ Vds: 5875pF @ 10V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 3.7W (Ta), 39.1W (Tc)
Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
Alternative Parts (Cross-Reference): AP2613GYT-HF; DMP2010UFV-7; DMP2010UFV-13; FDMC510P-F106;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SIS407ADN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS407ADN-T1-GE3
Single FETs, MOSFETs SIS407ADN-T1-GE3
MOSFET P-CH 20V 18A PPAK1212-8

MOSFET P-CH 20V 18A PPAK1212-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SIS407ADN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS407ADN-T1-GE3TR-ND
Single FETs, MOSFETs SIS407ADN-T1-GE3TR-ND
P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS407ADN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS407ADN-T1-GE3DKR-ND
Single FETs, MOSFETs SIS407ADN-T1-GE3DKR-ND
P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS407ADN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS407ADN-T1-GE3CT-ND
Single FETs, MOSFETs SIS407ADN-T1-GE3CT-ND
P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8

MOSFET -20V Vds 8V Vgs PowerPAK 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS407ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS407ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS407ADN-T1-GE3
MOSFET P-CH 20V 18A PPAK1212-8

MOSFET P-CH 20V 18A PPAK1212-8

Supplier's Site
MOSFET P-CH 20V 18A 1212-8 PPAK - 880-SIS407ADN-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 20V 18A 1212-8 PPAK
880-SIS407ADN-T1-GE3
MOSFET P-CH 20V 18A 1212-8 PPAK 880-SIS407ADN-T1-GE3
MOSFET P-CH 20V 18A 1212-8 PPAK

MOSFET P-CH 20V 18A 1212-8 PPAK

Supplier's Site
Mosfet, P-Ch, -20V, -18A, Powerpak 1212; Transistor Polarity Vishay - 01AC4972 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -18A, Powerpak 1212; Transistor Polarity Vishay
01AC4972
Mosfet, P-Ch, -20V, -18A, Powerpak 1212; Transistor Polarity Vishay 01AC4972
MOSFET, P-CH, -20V, -18A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; RoHS Compliant: Yes

MOSFET, P-CH, -20V, -18A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 794409-SIS407ADN-T1-GE3 SIS407ADN-T1-GE3 SIS407ADN-T1-GE3TR-ND SIS407ADN-T1-GE3 SIS407ADN-T1-GE3 880-SIS407ADN-T1-GE3 01AC4972
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407ADN-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 20V 18A 1212-8 PPAK Mosfet, P-Ch, -20V, -18A, Powerpak 1212; Transistor Polarity Vishay
PD 3700 to 39100 milliwatts 3700 milliwatts 3700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAKR 1212-8 TO-3
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Tape & Reel (TR)
Polarity P-Channel; P-Channel P-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3SC065030D8S - Acme Chip Technology Co., Limited
Specs
Package Type 4-PowerTSFN
Packing Method Tape Reel; Tape & Reel (TR)
View Details
Single FETs, MOSFETs - AUIRF3710Z-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-220; TO-220-3
Transistor Grade / Operating Range Automotive
View Details
3 suppliers