MOSFET P-CH 20V 18A PPAK1212-8
Manufacturer: Vishay Siliconix
Win Source Part Number: 794409-SIS407ADN-T1-
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK 1212-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Family Name: SiS407ADN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Manufacturer Package: PowerPAK 1212-8
Channel Type Type: P
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 168nC @ 8V
Input Capacitance (Ciss) (Maximum) @ Vds: 5875pF @ 10V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 3.7W (Ta), 39.1W (Tc)
Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
Alternative Parts (Cross-Reference): AP2613GYT-HF; DMP2010UFV-7; DMP2010UFV-13; FDMC510P-F106;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Small Signal Field-Effect Transistor, 18A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8 Product overview: SIS407ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 18A, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 18A, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS407ADN-T1-GE3
P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 20V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 20V 18A PPAK1212-8
MOSFET, P-CH, -20V, -18A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; RoHS Compliant: Yes
MOSFET P-CH 20V 18A 1212-8 PPAK
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIS407ADN-T1-GE3 | 794409-SIS407ADN-T1-GE3 | 278-SIS407ADN-T1-GE3 | SIS407ADN-T1-GE3TR-ND | SIS407ADN-T1-GE3 | 01AC4972 | 880-SIS407ADN-T1-GE3 | SIS407ADN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS407ADN-T1-GE3 | P-Channel 18A 20V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -20V, -18A, Powerpak 1212; Transistor Polarity Vishay | MOSFET P-CH 20V 18A 1212-8 PPAK | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 20 volts | -20 volts | ||||||
| IDSS | 18000 milliamps | -18000 milliamps | ||||||
| PD | 3700 milliwatts | 3700 to 39100 milliwatts | 39100 milliwatts | 3700 milliwatts |
