Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS334DN-T1-GE3 SIS334DN-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096493-SIS334DN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 640pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.3 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1096493-SIS334DN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 640pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.3 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS334DN-T1-GE3 - 1096493-SIS334DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS334DN-T1-GE3
1096493-SIS334DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS334DN-T1-GE3 1096493-SIS334DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096493-SIS334DN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 640pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.3 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096493-SIS334DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 640pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.3 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 20A MOSFET Transistor
278-SIS334DN-T1-GE3
30V 20A MOSFET Transistor 278-SIS334DN-T1-GE3
MOSFET N-CH 30V 20A PPAK1212-8 Product overview: SIS334DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS334DN-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 20A PPAK1212-8 Product overview: SIS334DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS334DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIS334DN-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS334DN-T1-GE3-ND
Single FETs, MOSFETs SIS334DN-T1-GE3-ND
N-Channel 30V 20A (Tc) 3.8W (Ta), 50W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 20A (Tc) 3.8W (Ta), 50W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS334DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS334DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS334DN-T1-GE3
MOSFET N-CH 30V 20A PPAK1212-8

MOSFET N-CH 30V 20A PPAK1212-8

Supplier's Site
MOSFET 30 Volts 20 Amps 50 Watts - 880-SIS334DN-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 30 Volts 20 Amps 50 Watts
880-SIS334DN-T1-GE3
MOSFET 30 Volts 20 Amps 50 Watts 880-SIS334DN-T1-GE3
MOSFET 30 Volts 20 Amps 50 Watts

MOSFET 30 Volts 20 Amps 50 Watts

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096493-SIS334DN-T1-GE3 278-SIS334DN-T1-GE3 SIS334DN-T1-GE3-ND SIS334DN-T1-GE3 880-SIS334DN-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS334DN-T1-GE3 30V 20A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 30 Volts 20 Amps 50 Watts
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 3800 to 50000 milliwatts 3800 milliwatts 3800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerPAK 1212-8 Tape & Reel (TR) PowerPAK® 1212-8 PowerPAKR 1212-8
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