N-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 30V 35A PPAK1212-8
Manufacturer: Vishay
Win Source Part Number: 064663-SIS330DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 35A PPAK1212-8
MOSFET 30 Volts 35 Amps 52 Watts
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIS330DN-T1-GE3-ND | SIS330DN-T1-GE3 | 064663-SIS330DN-T1-GE3 | SIS330DN-T1-GE3 | 880-SIS330DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS330DN-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 30 Volts 35 Amps 52 Watts |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAKR 1212-8 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||
| IDSS | 35000 milliamps |
