Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R Product overview: SIS322DNT-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 15.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 15.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS322DNT-T1-GE3
N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 1096492-SIS322DNT-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 38.3A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 21.5nC @ 10V
Max Input Capacitance: 1000pF @ 15V
Maximum Gate-Source Voltage: +20V, -16V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
MOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:38.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:19.8W RoHS Compliant: Yes
MOSFET, N CH, 30V, 38.3A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:38.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:19.8W RoHS Compliant: Yes
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
MOSFET N-CH 30V 38.3A PPAK1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIS322DNT-T1-GE3 | SIS322DNT-T1-GE3DKR-ND | 1096492-SIS322DNT-T1-GE3 | 68W7091 | 68W7092 | SIS322DNT-T1-GE3 | SIS322DNT-T1-GE3 |
| Product Name | 30V 15.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS322DNT-T1-GE3 | Mosfet, N Channel, 30V, 38.3A, Powerpak 1212-8; Channel Type Vishay | Mosfet, N Ch, 30V, 38.3A, Powerpak 1212-8, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 19800 milliwatts | 3200 to 19800 milliwatts | 19800 milliwatts | 19800 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | TO-3 | TO-3 | PowerPAKR 1212-8 |
