Vishay Intertechnology, Inc. Single FETs, MOSFETs SIS178LDN-T1-GE3

Description
N-Channel 70V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
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Description
N-Channel 70V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote
Datasheet
Datasheet Summary
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The Vishay N-Channel MOSFET, part number 31AJ7247, features a maximum drain-source voltage (V_DS) of 70V and a continuous drain current (I_D) rating of 45.3A. It is housed in a PowerPAK 1212-8 package and is compliant with RoHS standards. The device exhibits a low on-state resistance (R_DS(on)) of 0.0095Oc at a gate-source voltage (V_GS) of 10V and 0.0135Oc at 4.5V, making it suitable for applications requiring efficient power management. This MOSFET is designed for various applications, including synchronous rectification, DC/DC converters, motor drive control, and load switching. It has a total gate charge (Q_g) of approximately 8.7nC, contributing to its efficiency in switching applications. The device is also characterized by a low R_DS x Q_g figure-of-merit, enhancing its performance in high-frequency applications. With a maximum power dissipation of 39W at a case temperature of 25¬8C, this MOSFET is capable of handling significant thermal loads. The operating junction temperature range is from -55¬8C to +150¬8C, providing versatility in different environmental conditions.

Datasheet Summary
Powered by GS/AI

The Vishay N-Channel MOSFET, part number 31AJ7247, features a maximum drain-source voltage (V_DS) of 70V and a continuous drain current (I_D) rating of 45.3A. It is housed in a PowerPAK 1212-8 package and is compliant with RoHS standards. The device exhibits a low on-state resistance (R_DS(on)) of 0.0095Oc at a gate-source voltage (V_GS) of 10V and 0.0135Oc at 4.5V, making it suitable for applications requiring efficient power management. This MOSFET is designed for various applications, including synchronous rectification, DC/DC converters, motor drive control, and load switching. It has a total gate charge (Q_g) of approximately 8.7nC, contributing to its efficiency in switching applications. The device is also characterized by a low R_DS x Q_g figure-of-merit, enhancing its performance in high-frequency applications. With a maximum power dissipation of 39W at a case temperature of 25¬8C, this MOSFET is capable of handling significant thermal loads. The operating junction temperature range is from -55¬8C to +150¬8C, providing versatility in different environmental conditions.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SIS178LDN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIS178LDN-T1-GE3TR-ND
Single FETs, MOSFETs 742-SIS178LDN-T1-GE3TR-ND
N-Channel 70V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 70V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIS178LDN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIS178LDN-T1-GE3CT-ND
Single FETs, MOSFETs 742-SIS178LDN-T1-GE3CT-ND
N-Channel 70V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 70V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIS178LDN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIS178LDN-T1-GE3DKR-ND
Single FETs, MOSFETs 742-SIS178LDN-T1-GE3DKR-ND
N-Channel 70V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 70V 13.9A (Ta), 45.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS178LDN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS178LDN-T1-GE3
Single FETs, MOSFETs SIS178LDN-T1-GE3
N-CHANNEL 70 V (D-S) MOSFET POWE

N-CHANNEL 70 V (D-S) MOSFET POWE

Supplier's Site Datasheet
Mosfet, N-Ch, 70V, 45.3A, Powerpak 1212 Rohs Compliant Vishay - 31AJ7247 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 70V, 45.3A, Powerpak 1212 Rohs Compliant Vishay
31AJ7247
Mosfet, N-Ch, 70V, 45.3A, Powerpak 1212 Rohs Compliant Vishay 31AJ7247
MOSFET, N-CH, 70V, 45.3A, POWERPAK 1212 ROHS COMPLIANT: YES

MOSFET, N-CH, 70V, 45.3A, POWERPAK 1212 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS178LDN-T1-GE3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS178LDN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS178LDN-T1-GE3
N-CHANNEL 70 V (D-S) MOSFET POWE

N-CHANNEL 70 V (D-S) MOSFET POWE

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-SIS178LDN-T1-GE3TR-ND SIS178LDN-T1-GE3 31AJ7247 SIS178LDN-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 70V, 45.3A, Powerpak 1212 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type PowerPAK® 1212-8 PowerPAK® 1212-8 TO-3 PowerPAKR 1212-8
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 70 volts
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