Trans MOSFET N-CH 80V 12A 8-Pin PowerPAK 1212 EP T/R Product overview: SIS126DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS126DN-T1-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 964297-SIS126DN-T1-G
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIS126DN-T1-GE3CT,SI
Base Product Number: SIS126
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 80V 12A (Ta), 45.1A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 80V 12A (Ta), 45.1A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 80V 12A (Ta), 45.1A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-Channel 80 V (D-S) MOSFET
MOSFET, N-CH, 80V, 45.1A, POWERPAK 1212; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:45.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
MOSFET N-CH 80V 12A/45.1A PPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIS126DN-T1-GE3 | 964297-SIS126DN-T1-GE3 | SIS126DN-T1-GE3TR-ND | SIS126DN-T1-GE3 | 10AH0982 | SIS126DN-T1-GE3 |
| Product Name | 80V 12A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 80V, 45.1A, Powerpak 1212; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 80 volts | |||||
| PD | 3700 milliwatts | 3700 to 52000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
