N-Channel 100V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8
Power Field-Effect Transistor, Product overview: SIS110DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS110DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 5.2A/14.2A PPAK
Manufacturer: Vishay
Win Source Part Number: 895090-SIS110DN-T1-G
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIS110
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIS110DN-T1-GE3TR, SIS110DN-T1-GE3DKR, SIS110DN-T1-GE3CT
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
MOSFET, N-CH, 100V, 14.2A, 150DEG C, 24W; Transistor Polarity:N Channel; Continuous Drain Current Id:14.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIS110DN-T1-GE3DKR-ND | 278-SIS110DN-T1-GE3 | SIS110DN-T1-GE3 | 895090-SIS110DN-T1-GE3 | SIS110DN-T1-GE3 | 78AC6534 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS110DN-T1-GE3 | MOSFET | Mosfet, N-Ch, 100V, 14.2A, 150Deg C, 24W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | SOT3; PowerPAK® 1212-8 | TO-3 | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
