Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIS106DN-T1-GE3

Description
Win Source Part Number: 1277659-SIS106DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIS106DN-T1-GE3CT,SI S106DN-T1-GE3TR,SIS1 06DN-T1-GE3DKR Base Product Number: SIS106 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Request a Quote Datasheet
Description
Win Source Part Number: 1277659-SIS106DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIS106DN-T1-GE3CT,SI S106DN-T1-GE3TR,SIS1 06DN-T1-GE3DKR Base Product Number: SIS106 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277659-SIS106DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277659-SIS106DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277659-SIS106DN-T1-GE3
Win Source Part Number: 1277659-SIS106DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIS106DN-T1-GE3CT,SI S106DN-T1-GE3TR,SIS1 06DN-T1-GE3DKR Base Product Number: SIS106 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1277659-SIS106DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIS106DN-T1-GE3CT,SIS106DN-T1-GE3TR,SIS106DN-T1-GE3DKR
Base Product Number: SIS106
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIS106DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS106DN-T1-GE3
Single FETs, MOSFETs SIS106DN-T1-GE3
MOSFET N-CH 60V 9.8A/16A PPAK

MOSFET N-CH 60V 9.8A/16A PPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - SIS106DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS106DN-T1-GE3TR-ND
Single FETs, MOSFETs SIS106DN-T1-GE3TR-ND
N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS106DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS106DN-T1-GE3DKR-ND
Single FETs, MOSFETs SIS106DN-T1-GE3DKR-ND
N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS106DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS106DN-T1-GE3CT-ND
Single FETs, MOSFETs SIS106DN-T1-GE3CT-ND
N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Mosfet, N-Ch, 60V, 16A, 150Deg C, 24W; Transistor Polarity Vishay - 04AJ4579 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 16A, 150Deg C, 24W; Transistor Polarity Vishay
04AJ4579
Mosfet, N-Ch, 60V, 16A, 150Deg C, 24W; Transistor Polarity Vishay 04AJ4579
MOSFET, N-CH, 60V, 16A, 150DEG C, 24W; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 16A, 150DEG C, 24W; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8

MOSFET 60V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277659-SIS106DN-T1-GE3 SIS106DN-T1-GE3 SIS106DN-T1-GE3TR-ND 04AJ4579 SIS106DN-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 60V, 16A, 150Deg C, 24W; Transistor Polarity Vishay MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT3 PowerPAK® 1212-8 PowerPAK® 1212-8 TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
Unlock Full Specs
to access all available technical data