MOSFET N-CH 60V 9.8A/16A PPAK
N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8
Win Source Part Number: 1277659-SIS106DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIS106DN-T1-GE3CT,SI
Base Product Number: SIS106
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Trans MOSFET N-CH 60V 9.8A 8-Pin PowerPAK 1212 EP T/R Product overview: SIS106DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS106DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
MOSFET, N-CH, 60V, 16A, 150DEG C, 24W; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIS106DN-T1-GE3 | SIS106DN-T1-GE3TR-ND | 1277659-SIS106DN-T1-GE3 | 278-SIS106DN-T1-GE3 | SIS106DN-T1-GE3 | 04AJ4579 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 60V 9.8A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 60V, 16A, 150Deg C, 24W; Transistor Polarity Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 9800 milliamps | 16000 milliamps | ||||
| PD | 3200 milliwatts | 3200 milliwatts |
