Vishay Precision Group Single FETs, MOSFETs SIRC10DP-T1-GE3

The SIRC10DP-T1-GE3 is an N-Channel MOSFET designed for applications requiring efficient power management. It features a maximum drain-source voltage (V_DS) of 30 V and a continuous drain current (I_D) rating of 60 A at a case temperature of 25 ¬8C. The device exhibits a low on-state resistance (R_DS(on)) of 0.0035 Oc at a gate-source voltage (V_GS) of 10 V, making it suitable for high-efficiency synchronous buck converters and DC/DC conversion applications. This MOSFET is housed in a PowerPAK SO-8 package, which is optimized for surface mounting. It includes a monolithic Schottky diode, enhancing its performance in synchronous rectification scenarios. The operating temperature range is broad, from -55 ¬8C to +150 ¬8C, ensuring reliability in various environments. The device is also lead-free and halogen-free, aligning with modern environmental standards. Engineers considering this component should note its suitability for high-frequency applications, as it has been tested for gate charge and switching characteristics, which are critical for efficient operation in RF applications. The SIRC10DP-T1-GE3 is a robust choice for projects requiring reliable and efficient power management solutions.