Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIRC06DP-T1-GE3

Description
Win Source Part Number: 1093105-SIRC06DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Schottky Diode (Body) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 5W (Ta), 50W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRC06DP-T1-GE3CT,SI RC06DP-T1-GE3TR,SIRC 06DP-T1-GE3DKR Base Product Number: SIRC06 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1093105-SIRC06DP-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIRC06DP-T1-GE3TR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay - 81AC2786 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIRC06DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1093105-SIRC06DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Schottky Diode (Body) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 5W (Ta), 50W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRC06DP-T1-GE3CT,SI RC06DP-T1-GE3TR,SIRC 06DP-T1-GE3DKR Base Product Number: SIRC06 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1093105-SIRC06DP-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1093105-SIRC06DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1093105-SIRC06DP-T1-GE3
Win Source Part Number: 1093105-SIRC06DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Schottky Diode (Body) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 5W (Ta), 50W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRC06DP-T1-GE3CT,SI RC06DP-T1-GE3TR,SIRC 06DP-T1-GE3DKR Base Product Number: SIRC06 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1093105-SIRC06DP-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Schottky Diode (Body)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRC06DP-T1-GE3CT,SIRC06DP-T1-GE3TR,SIRC06DP-T1-GE3DKR
Base Product Number: SIRC06
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIRC06DP-T1-GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRC06DP-T1-GE3TR-ND
Single FETs, MOSFETs SIRC06DP-T1-GE3TR-ND
N-Channel 30V 32A (Ta), 60A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 32A (Ta), 60A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIRC06DP-T1-GE3
MOSFET SIRC06DP-T1-GE3
MOSFET 30V Vds 20V Vgs PowerPAK SO-8

MOSFET 30V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay - 81AC2786 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay
81AC2786
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay 81AC2786
MOSFET, N-CH, 30V, 60A, 150DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 60A, 150DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIRC06DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIRC06DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIRC06DP-T1-GE3
MOSFET N-CH 30V 32A/60A PPAK SO8

MOSFET N-CH 30V 32A/60A PPAK SO8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1093105-SIRC06DP-T1-GE3 SIRC06DP-T1-GE3TR-ND SIRC06DP-T1-GE3 81AC2786 SIRC06DP-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 5000 to 50000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 TO-3 SO-8; PowerPAKR SO-8
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