MOSFET P-CH 30V 47.9A/195A PPAK
P-Channel 30V 47.9A (Ta), 195A (Tc) 6.35W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 30V 47.9A (Ta), 195A (Tc) 6.35W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 30V 47.9A (Ta), 195A (Tc) 6.35W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 30-V (D-S) MOSFET PowerPAK SO
P-Channel 30-V (D-S) MOSFET PowerPAK SO
P-Channel 30-V (D-S) MOSFET PowerPAK SO
Manufacturer: Vishay Siliconix
Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series: TrenchFET® Gen IV
Package: Tape & Reel (TR) Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Product Status: Active
Product Status: SIRA99
N-Channel MOSFET, 30V, 100A, Low Rds(on) Product overview: SIRA99DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA99DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 47.9A/195A PPAK
MOSFET, P-CH, -30V, -195A, POWERPAK SO-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:195A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET P-Channel 30 V (D-S) MOSFET
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIRA99DP-T1-GE3 | SIRA99DP-T1-GE3TR-ND | 1885097 | 1885097P | 278-SIRA99DP-T1-GE3 | SIRA99DP-T1-GE3 | 10AH0970 | SIRA99DP-T1-GE3 | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs | N-Channel 30V 100A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -195A, Powerpak So-8; Channel Type Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | ||||||||
| IDSS | 47900 milliamps | 195000 milliamps | |||||||
| PD | 6350 milliwatts |