Vishay Precision Group 30V 100A MOSFET Transistor SIRA90DP-T1-GE3

Description
MOSFETs 30V Vds 100A Id Qg 48nC Typ. Product overview: SIRA90DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIRA90DP-T1-GE3 can be used for catalog matching and distributor lookup.
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Description
MOSFETs 30V Vds 100A Id Qg 48nC Typ. Product overview: SIRA90DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIRA90DP-T1-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
30V 100A MOSFET Transistor
2088-SIRA90DP-T1-GE3
30V 100A MOSFET Transistor 2088-SIRA90DP-T1-GE3
MOSFETs 30V Vds 100A Id Qg 48nC Typ. Product overview: SIRA90DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIRA90DP-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFETs 30V Vds 100A Id Qg 48nC Typ. Product overview: SIRA90DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIRA90DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - SIRA90DP-T1-GE3 - 812133-SIRA90DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SIRA90DP-T1-GE3
812133-SIRA90DP-T1-GE3
FETs - Single - SIRA90DP-T1-GE3 812133-SIRA90DP-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 812133-SIRA90DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 104W (Tc) Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 0.8mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 10180pF at 15V Current - Continuous Drain (Id) at 25°C: 100A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: +20V, -16V

Manufacturer: Vishay Siliconix
Win Source Part Number: 812133-SIRA90DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 104W (Tc)
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 0.8mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 10180pF at 15V
Current - Continuous Drain (Id) at 25°C: 100A (Tc)
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: +20V, -16V

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Single FETs, MOSFETs - SIRA90DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIRA90DP-T1-GE3
Single FETs, MOSFETs SIRA90DP-T1-GE3
MOSFET N-CH 30V 100A PPAK SO-8

MOSFET N-CH 30V 100A PPAK SO-8

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIRA90DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIRA90DP-T1-GE3
MOSFET N-CH 30V 100A PPAK SO-8

MOSFET N-CH 30V 100A PPAK SO-8

Supplier's Site
Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay - 15AC8636 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay
15AC8636
Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay 15AC8636
MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 100A Id Qg 48nC Typ.

MOSFET 30V Vds 100A Id Qg 48nC Typ.

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2088-SIRA90DP-T1-GE3 812133-SIRA90DP-T1-GE3 SIRA90DP-T1-GE3 SIRA90DP-T1-GE3 15AC8636 SIRA90DP-T1-GE3
Product Name 30V 100A MOSFET Transistor FETs - Single - SIRA90DP-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
Transconductance 0.1100 kS
PD 104 milliwatts 104000 milliwatts 104000 milliwatts
Package Type Reel SO-8; SOT3 SO-8; PowerPAK® SO-8 SO-8; PowerPAKR SO-8 TO-3
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