MOSFET N-CH 30V 100A PPAK SO-8
Manufacturer: Vishay Siliconix
Win Source Part Number: 812133-SIRA90DP-T1-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 104W (Tc)
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 0.8mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 10180pF at 15V
Current - Continuous Drain (Id) at 25°C: 100A (Tc)
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: +20V, -16V
MOSFETs 30V Vds 100A Id Qg 48nC Typ. Product overview: SIRA90DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIRA90DP-T1-GE3
MOSFET 30V Vds 100A Id Qg 48nC Typ.
MOSFET N-CH 30V 100A PPAK SO-8
MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIRA90DP-T1-GE3 | 812133-SIRA90DP-T1-GE3 | 2088-SIRA90DP-T1-GE3 | SIRA90DP-T1-GE3 | SIRA90DP-T1-GE3 | 15AC8636 |
| Product Name | Single FETs, MOSFETs | FETs - Single - SIRA90DP-T1-GE3 | 30V 100A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 100000 milliamps | 100000 milliamps | ||||
| PD | 104000 milliwatts | 104000 milliwatts | 104 milliwatts |
