Vishay Precision Group FETs - Single - SIRA90DP-T1-GE3 SIRA90DP-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 812133-SIRA90DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 104W (Tc) Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 0.8mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 10180pF at 15V Current - Continuous Drain (Id) at 25°C: 100A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: +20V, -16V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 812133-SIRA90DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 104W (Tc) Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 0.8mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 10180pF at 15V Current - Continuous Drain (Id) at 25°C: 100A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: +20V, -16V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - SIRA90DP-T1-GE3 - 812133-SIRA90DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SIRA90DP-T1-GE3
812133-SIRA90DP-T1-GE3
FETs - Single - SIRA90DP-T1-GE3 812133-SIRA90DP-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 812133-SIRA90DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 104W (Tc) Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 0.8mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 10180pF at 15V Current - Continuous Drain (Id) at 25°C: 100A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: +20V, -16V

Manufacturer: Vishay Siliconix
Win Source Part Number: 812133-SIRA90DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 104W (Tc)
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 0.8mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 153nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 10180pF at 15V
Current - Continuous Drain (Id) at 25°C: 100A (Tc)
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: +20V, -16V

Buy Now
Single FETs, MOSFETs - SIRA90DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIRA90DP-T1-GE3
Single FETs, MOSFETs SIRA90DP-T1-GE3
MOSFET N-CH 30V 100A PPAK SO-8

MOSFET N-CH 30V 100A PPAK SO-8

Supplier's Site Datasheet
Singapore
30V 100A MOSFET Transistor
2088-SIRA90DP-T1-GE3
30V 100A MOSFET Transistor 2088-SIRA90DP-T1-GE3
MOSFETs 30V Vds 100A Id Qg 48nC Typ. Product overview: SIRA90DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIRA90DP-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFETs 30V Vds 100A Id Qg 48nC Typ. Product overview: SIRA90DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIRA90DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay - 15AC8636 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay
15AC8636
Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay 15AC8636
MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIRA90DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIRA90DP-T1-GE3
MOSFET N-CH 30V 100A PPAK SO-8

MOSFET N-CH 30V 100A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Vds 100A Id Qg 48nC Typ.

MOSFET 30V Vds 100A Id Qg 48nC Typ.

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 812133-SIRA90DP-T1-GE3 SIRA90DP-T1-GE3 2088-SIRA90DP-T1-GE3 15AC8636 SIRA90DP-T1-GE3 SIRA90DP-T1-GE3
Product Name FETs - Single - SIRA90DP-T1-GE3 Single FETs, MOSFETs 30V 100A MOSFET Transistor Mosfet, N-Ch, 30V, 100A, Powerpak So; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 104000 milliwatts 104000 milliwatts 104 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 Reel TO-3 SO-8; PowerPAKR SO-8
Packing Method Tape Reel; Reel Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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