Win Source Part Number: 1383444-SIRA84BDP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 36W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 42 pct.
HTSUS: 8541.29.0095
Mfr: Vishay
Base Product Number: SIRA84
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 3,000 pcs
MOSFET N-CH 30V 22A/70A PPAK SO8
N-Channel 30V 22A (Ta), 70A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 22A (Ta), 70A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 22A (Ta), 70A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
Trans MOSFET N-CH 30V 22A 8-Pin PowerPAK SO EP Product overview: SIRA84BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA84BDP-T1-GE3
MOSFET N-CH 30V 22A/70A PPAK SO8
MOSFET, N-CH, 30V, 70A, 150DEG C, 36W; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
MOSFET N-Channel 30 V (D-S) MOSFET
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1383444-SIRA84BDP-T1-GE3 | SIRA84BDP-T1-GE3 | SIRA84BDP-T1-GE3TR-ND | 278-SIRA84BDP-T1-GE3 | SIRA84BDP-T1-GE3 | 10AH0969 | SIRA84BDP-T1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 22A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 70A, 150Deg C, 36W; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 3700 to 36000 milliwatts | 3700 milliwatts | 3700 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
