MOSFET N-CH 30V 100A PPAK SO-8
N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1178945-SIRA80DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 104W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRA80DP-T1-RE3TR,SI
Base Product Number: SIRA80
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel MOSFET, 30V, 100A, 0.0075 Ohm Product overview: SIRA80DP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 100A, 0.0075 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, 0.0075 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA80DP-T1-RE3 can be used for catalog matching and distributor lookup.
MOSFET 30V Vds 20/-16V Vgs PowerPAK SO-8
MOSFET N-CH 30V 100A PPAK SO-8
MOSFET, N-CH, 30V, 100A, 150DEG C, 104W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; PowerRoHS Compliant: Yes
30V 100A 104W 0.62mΩ@20A,10V 2.2V@250uA N Channel PowerPAK-SO-8 MOSFETs ROHS
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIRA80DP-T1-RE3 | SIRA80DP-T1-RE3TR-ND | 1178945-SIRA80DP-T1-RE3 | 278-SIRA80DP-T1-RE3 | SIRA80DP-T1-RE3 | SIRA80DP-T1-RE3 | 81AC2784 | SIRA80DP-T1-RE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 30V 100A 0.0075 Ohm MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 100A, 150Deg C, 104W; Transistor Polarity Vishay | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| IDSS | 100000 milliamps | 100000 milliamps | ||||||
| PD | 104000 milliwatts | 104000 milliwatts | 104000 milliwatts |
