Win Source Part Number: 1019181-SIRA58DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 27.7W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRA58DP-T1-GE3TR,SI
Base Product Number: SIRA58
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8
Power Field-Effect Transistor, Product overview: SIRA58DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA58DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 40V 60A PPAK SO-8
MOSFET N-CH 40V 60A PPAK SO-8
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1019181-SIRA58DP-T1-GE3 | SIRA58DP-T1-GE3CT-ND | 278-SIRA58DP-T1-GE3 | SIRA58DP-T1-GE3 | SIRA58DP-T1-GE3 | SIRA58DP-T1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 27700 milliwatts | 27700 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 |
