MOSFET N-CH 40V 60A PPAK SO-8
Win Source Part Number: 1117857-SIRA54DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 36.7W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 20 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIRA54DPT1GE3;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRA54DP-T1-GE3CT,SI
Base Product Number: SIRA54
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8
SIRA54DP-T1-GE3 Vishay MOSFETs Transistor N-CH 40V 60A 8-Pin PowerPAK SO EP T/R - Arrow.com Product overview: SIRA54DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA54DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 40V 60A PPAK SO-8
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIRA54DP-T1-GE3 | 1117857-SIRA54DP-T1-GE3 | 742-SIRA54DP-T1-GE3TR-ND | 278-SIRA54DP-T1-GE3 | SIRA54DP-T1-GE3 | SIRA54DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 40V 60A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| IDSS | 60000 milliamps | |||||
| PD | 36700 milliwatts | 36700 milliwatts | 4400 milliwatts |