Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIRA50DP-T1-RE3

Description
Win Source Part Number: 1277653-SIRA50DP-T1- RE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRA50DP-T1-RE3TR,SI RA50DP-T1-RE3DKR,SIR A50DP-T1-RE3CT Base Product Number: SIRA50 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277653-SIRA50DP-T1- RE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRA50DP-T1-RE3TR,SI RA50DP-T1-RE3DKR,SIR A50DP-T1-RE3CT Base Product Number: SIRA50 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277653-SIRA50DP-T1-RE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277653-SIRA50DP-T1-RE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277653-SIRA50DP-T1-RE3
Win Source Part Number: 1277653-SIRA50DP-T1- RE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIRA50DP-T1-RE3TR,SI RA50DP-T1-RE3DKR,SIR A50DP-T1-RE3CT Base Product Number: SIRA50 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277653-SIRA50DP-T1-RE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRA50DP-T1-RE3TR,SIRA50DP-T1-RE3DKR,SIRA50DP-T1-RE3CT
Base Product Number: SIRA50
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIRA50DP-T1-RE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA50DP-T1-RE3DKR-ND
Single FETs, MOSFETs SIRA50DP-T1-RE3DKR-ND
N-Channel 40V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIRA50DP-T1-RE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA50DP-T1-RE3CT-ND
Single FETs, MOSFETs SIRA50DP-T1-RE3CT-ND
N-Channel 40V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIRA50DP-T1-RE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA50DP-T1-RE3TR-ND
Single FETs, MOSFETs SIRA50DP-T1-RE3TR-ND
N-Channel 40V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 40V Vds 20V Vgs PowerPAK SO-8

MOSFET 40V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Mosfet, N-Ch, 40V, 100A, Powerpak So; Transistor Polarity Vishay - 50AC9655 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 100A, Powerpak So; Transistor Polarity Vishay
50AC9655
Mosfet, N-Ch, 40V, 100A, Powerpak So; Transistor Polarity Vishay 50AC9655
MOSFET, N-CH, 40V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):860µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 40V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):860µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIRA50DP-T1-RE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIRA50DP-T1-RE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIRA50DP-T1-RE3
MOSFET N-CH 40V 62.5A/100A PPAK

MOSFET N-CH 40V 62.5A/100A PPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277653-SIRA50DP-T1-RE3 SIRA50DP-T1-RE3DKR-ND SIRA50DP-T1-RE3 50AC9655 SIRA50DP-T1-RE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 40V, 100A, Powerpak So; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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