Trans MOSFET N-CH 40V 54.8A 8-Pin PowerPAK SO EP T/R Product overview: SIRA50ADP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 54.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 54.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA50ADP-T1-RE3
Win Source Part Number: 970251-SIRA50ADP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 20 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRA50ADP-T1-RE3TR,S
Base Product Number: SIRA50
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 40V 54.8A (Ta), 219A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 54.8A (Ta), 219A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 54.8A (Ta), 219A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8
MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8
MOSFET, N-CH, 219A, 40V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:219A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 54.8A/219A PPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIRA50ADP-T1-RE3 | 970251-SIRA50ADP-T1-RE3 | SIRA50ADP-T1-RE3DKR-ND | SIRA50ADP-T1-RE3 | 38AH5931 | SIRA50ADP-T1-RE3 |
| Product Name | 40V 54.8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 219A, 40V, Powerpak So; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 40 volts | |||||
| Transconductance | 0.1300 kS | |||||
| PD | 100 milliwatts | 6250 to 100000 milliwatts |
