N-Channel 30V 18A (Ta), 38A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 18A (Ta), 38A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 18A (Ta), 38A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8
Power Field-Effect Transistor, Product overview: SIRA28BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA28BDP-T1-GE3
Win Source Part Number: 959081-SIRA28BDP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRA28BDP-T1-GE3CT,S
Base Product Number: SIRA28
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
MOSFET N-CH 30V 18A/38A PPAK SO8
MOSFET, N-CH, 38A, 30V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIRA28BDP-T1-GE3DKR-ND | 278-SIRA28BDP-T1-GE3 | 959081-SIRA28BDP-T1-GE3 | SIRA28BDP-T1-GE3 | SIRA28BDP-T1-GE3 | 02AH2520 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 38A, 30V, Powerpak So; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAKR SO-8 | TO-3 | ||
| PD | 3800 to 17000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
