Vishay Intertechnology, Inc. Single FETs, MOSFETs SIRA24DP-T1-GE3

Description
MOSFET N-CH 25V 60A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 25V 60A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIRA24DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIRA24DP-T1-GE3
Single FETs, MOSFETs SIRA24DP-T1-GE3
MOSFET N-CH 25V 60A PPAK SO-8

MOSFET N-CH 25V 60A PPAK SO-8

Supplier's Site Datasheet
Singapore
25V 60A MOSFET Transistor
278-SIRA24DP-T1-GE3
25V 60A MOSFET Transistor 278-SIRA24DP-T1-GE3
Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK SO EP T/R Product overview: SIRA24DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA24DP-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK SO EP T/R Product overview: SIRA24DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA24DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIRA24DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA24DP-T1-GE3TR-ND
Single FETs, MOSFETs SIRA24DP-T1-GE3TR-ND
N-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIRA24DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA24DP-T1-GE3CT-ND
Single FETs, MOSFETs SIRA24DP-T1-GE3CT-ND
N-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIRA24DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA24DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIRA24DP-T1-GE3DKR-ND
N-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 25V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA24DP-T1-GE3 - 895083-SIRA24DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA24DP-T1-GE3
895083-SIRA24DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA24DP-T1-GE3 895083-SIRA24DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 895083-SIRA24DP-T1-G E3 Series: TrenchFET® Gen IV Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 25 V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8 Package: PowerPAK® SO-8 Package: Reel - TR Mounting: Surface Mount Family Name: SIRA24 Categories: Discrete Semiconductor Products Case / Package: PowerPAK® SO-8 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SIRA24DP-T1-GE3CT, SIRA24DP-T1-GE3DKR, SIRA24DP-T1-GE3TR

Manufacturer: Vishay
Win Source Part Number: 895083-SIRA24DP-T1-GE3
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 25 V 60A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIRA24
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIRA24DP-T1-GE3CT, SIRA24DP-T1-GE3DKR, SIRA24DP-T1-GE3TR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIRA24DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIRA24DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIRA24DP-T1-GE3
MOSFET N-CH 25V 60A PPAK SO-8

MOSFET N-CH 25V 60A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 25V Vds 20V Vgs PowerPAK SO-8

MOSFET 25V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIRA24DP-T1-GE3 278-SIRA24DP-T1-GE3 SIRA24DP-T1-GE3TR-ND 895083-SIRA24DP-T1-GE3 SIRA24DP-T1-GE3 SIRA24DP-T1-GE3
Product Name Single FETs, MOSFETs 25V 60A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA24DP-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 25 volts 25 volts
IDSS 60000 milliamps
PD 62500 milliwatts 5000 milliwatts
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