Trans MOSFET N-CH 25V 82A 8-Pin PowerPAK SO EP T/R Product overview: SIRA20BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 82A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 82A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA20BDP-T1-GE3
Win Source Part Number: 982860-SIRA20BDP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Vgs (Max): +16V, -12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIRA20BDP-T1-GE3
Base Product Number: SIRA20
N-Channel 25V 82A (Ta), 335A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 25V 82A (Ta), 335A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 25V 82A (Ta), 335A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 25V 82A/335A PPAK
MOSFET, N-CH, 25V, 335A, POWERPAK SO ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIRA20BDP-T1-GE3 | 2282916 | 982860-SIRA20BDP-T1-GE3 | 742-SIRA20BDP-T1-GE3TR-ND | SIRA20BDP-T1-GE3 | 15AJ3207 |
| Product Name | 25V 82A MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 25V, 335A, Powerpak So Rohs Compliant Vishay |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 25 volts | |||||
| PD | 6300 milliwatts | 6300 to 104000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
