Manufacturer: Vishay
Win Source Part Number: 895082-SIRA18BDP-T1-
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 19A (Ta), 40A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIRA18
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 38 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIRA18BDP-T1-GE3DKR,
Power Field-Effect Transistor, Product overview: SIRA18BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA18BDP-T1-GE3
N-Channel 30V 19A (Ta), 40A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 19A (Ta), 40A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 19A (Ta), 40A (Tc) 3.8W (Ta), 17W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 30V 19A/40A PPAK SO8
MOSFET N-CH 30V 19A/40A PPAK SO8
MOSFET N-Channel 30 V (D-S) MOSFET
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 895082-SIRA18BDP-T1-GE3 | 278-SIRA18BDP-T1-GE3 | SIRA18BDP-T1-GE3DKR-ND | SIRA18BDP-T1-GE3 | SIRA18BDP-T1-GE3 | SIRA18BDP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA18BDP-T1-GE3 | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; SOT3; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
