Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA14DP-T1-GE3 SIRA14DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028769-SIRA14DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1450pF @ 15V Maximum Gate-Source Voltage: +20V, -16V Maximum Rds On at Id,Vgs: 5.1 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SIR802DP-T1-GE3; TPCC8007(TE12L,Q); TPCC8007; SiRA14DP-T1-GE3; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 028769-SIRA14DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1450pF @ 15V Maximum Gate-Source Voltage: +20V, -16V Maximum Rds On at Id,Vgs: 5.1 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SIR802DP-T1-GE3; TPCC8007(TE12L,Q); TPCC8007; SiRA14DP-T1-GE3; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA14DP-T1-GE3 - 028769-SIRA14DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA14DP-T1-GE3
028769-SIRA14DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA14DP-T1-GE3 028769-SIRA14DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028769-SIRA14DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 1450pF @ 15V Maximum Gate-Source Voltage: +20V, -16V Maximum Rds On at Id,Vgs: 5.1 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SIR802DP-T1-GE3; TPCC8007(TE12L,Q); TPCC8007; SiRA14DP-T1-GE3; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028769-SIRA14DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1450pF @ 15V
Maximum Gate-Source Voltage: +20V, -16V
Maximum Rds On at Id,Vgs: 5.1 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SIR802DP-T1-GE3; TPCC8007(TE12L,Q); TPCC8007; SiRA14DP-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SIRA14DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA14DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIRA14DP-T1-GE3DKR-ND
N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIRA14DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA14DP-T1-GE3TR-ND
Single FETs, MOSFETs SIRA14DP-T1-GE3TR-ND
N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIRA14DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIRA14DP-T1-GE3CT-ND
Single FETs, MOSFETs SIRA14DP-T1-GE3CT-ND
N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
MOSFETs - 7879389P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879389P
MOSFETs 7879389P
MOSFET N-Ch 30V 19.8A PowerPAK SO8

MOSFET N-Ch 30V 19.8A PowerPAK SO8

Supplier's Site
MOSFETs - 7879389 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879389
MOSFETs 7879389
MOSFET N-Ch 30V 19.8A PowerPAK SO8

MOSFET N-Ch 30V 19.8A PowerPAK SO8

Supplier's Site
MOSFETs - 1656980 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1656980
MOSFETs 1656980
MOSFET N-Ch 30V 19.8A PowerPAK SO8

MOSFET N-Ch 30V 19.8A PowerPAK SO8

Supplier's Site
Singapore
N-Channel 30V 20A 1.1V MOSFET Transistor
278-SIRA14DP-T1-GE3
N-Channel 30V 20A 1.1V MOSFET Transistor 278-SIRA14DP-T1-GE3
N-Channel MOSFET, 30V, 20A, 5.1mR RdsOn, 1.1V Vgs(th) Product overview: SIRA14DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 20A, 1.1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, 1.1V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA14DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 30V, 20A, 5.1mR RdsOn, 1.1V Vgs(th) Product overview: SIRA14DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 20A, 1.1V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, 1.1V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA14DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIRA14DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIRA14DP-T1-GE3
Single FETs, MOSFETs SIRA14DP-T1-GE3
MOSFET N-CH 30V 58A PPAK SO-8

MOSFET N-CH 30V 58A PPAK SO-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs PowerPAK SO-8

MOSFET 30V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Mosfet, N-Ch, 30V, Ppak-So8; Transistor Polarity Vishay - 63W4125 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, Ppak-So8; Transistor Polarity Vishay
63W4125
Mosfet, N-Ch, 30V, Ppak-So8; Transistor Polarity Vishay 63W4125
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00425ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00425ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIRA14DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIRA14DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIRA14DP-T1-GE3
MOSFET N-CH 30V 58A PPAK SO-8

MOSFET N-CH 30V 58A PPAK SO-8

Supplier's Site
Transistor - 88690121 - Radwell International
Willingboro, NJ, United States
Transistor
88690121
Transistor 88690121
MOSFET, N CHANNEL, 30V, 20A, POWERPAK SO-8; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:20A; DRAIN SOURCE VOLTAGE VDS:30V; ON RESISTANCE RDS(ON):0.00425OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:1.1V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CHANNEL, 30V, 20A, POWERPAK SO-8; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:20A; DRAIN SOURCE VOLTAGE VDS:30V; ON RESISTANCE RDS(ON):0.00425OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:1.1V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 028769-SIRA14DP-T1-GE3 SIRA14DP-T1-GE3DKR-ND 7879389P 7879389 278-SIRA14DP-T1-GE3 SIRA14DP-T1-GE3 SIRA14DP-T1-GE3 63W4125 SIRA14DP-T1-GE3 88690121
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA14DP-T1-GE3 Single FETs, MOSFETs MOSFETs MOSFETs N-Channel 30V 20A 1.1V MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, Ppak-So8; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 3600 to 31200 milliwatts 31200 milliwatts 3600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAK® SO-8 SO-8; SO-8 Powerpak so SO-8; PowerPAK® SO-8 TO-3 SO-8; PowerPAKR SO-8
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