Vishay Intertechnology, Inc. Single FETs, MOSFETs SIRA14DDP-T1-UE3

N-Channel 30 V MOSFET in a PowerPAK SO-8 package, designed for synchronous rectification and DC/DC conversion. The device features a drain-source on-state resistance of 0.00538 Ω at 10 V gate-source voltage and 0.00702 Ω at 4.5 V, with a continuous drain current of 64 A at 25 °C and 52 A at 70 °C. It supports a single-pulse avalanche energy of 11.3 mJ and operates from -55 °C to +150 °C. The package measures 6.15 mm by 5.15 mm. The part is lead-free, halogen-free, and meets RoHS standards.