Power Field-Effect Transistor, Product overview: SIRA14BDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA14BDP-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 895081-SIRA14BDP-T1-
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIRA14
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 38 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIRA14BDP-T1-GE3TR, SIRA14BDP-T1-GE3CT, SIRA14BDP-T1-GE3DKR
N-Channel 30V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 30V 21A/64A PPAK SO8
MOSFET, N-CH, 64A, 30V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIRA14BDP-T1-GE3 | 895081-SIRA14BDP-T1-GE3 | SIRA14BDP-T1-GE3CT-ND | SIRA14BDP-T1-GE3 | 99AC9568 | SIRA14BDP-T1-GE3 |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA14BDP-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 64A, 30V, Powerpak So; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SO-8; SOT3; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 |
