Manufacturer: Vishay
Win Source Part Number: 130986-SIRA10DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 2425pF @ 15V
Maximum Gate-Source Voltage: +20V, -16V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 60A PPAK SO-8
30V 30A N-CH MOSFET, 3.7mR Rds On, SO-8 Product overview: SIRA10DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRA10DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 60A (Tc) 5W (Ta), 40W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 60A (Tc) 5W (Ta), 40W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 60A (Tc) 5W (Ta), 40W (Tc) Surface Mount PowerPAK® SO-8
N-Ch PowerPAK SO-8 BWL 30V 3.7mohm@10V
N-Ch PowerPAK SO-8 BWL 30V 3.7mohm@10V
N-Ch PowerPAK SO-8 BWL 30V 3.7mohm@10V
MOSFET, N CHANNEL, 30V, 30A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.1V RoHS Compliant: Yes
MOSFET, N CH, 30V, 30A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:40W RoHS Compliant: Yes
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 30V 60A PPAK SO-8
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 130986-SIRA10DP-T1-GE3 | SIRA10DP-T1-GE3 | 278-SIRA10DP-T1-GE3 | SIRA10DP-T1-GE3DKR-ND | 2567429P | 68W7083 | 68W7084 | SIRA10DP-T1-GE3 | SIRA10DP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIRA10DP-T1-GE3 | Single FETs, MOSFETs | 30V 30A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Mosfet, N Channel, 30V, 30A, Powerpak So-8; Channel Type Vishay | Mosfet, N Ch, 30V, 30A, Powerpak So-8, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| PD | 5000 to 40000 milliwatts | 5000 milliwatts | 40000 milliwatts | 40000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
