MOSFET N-CH 80V 60A PPAK SO-8 Product overview: SIR880ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR880ADP-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 1096485-SIR880ADP-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Family Name: SiR880ADP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 2289pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.3 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): STL75N8LF6; FDMS86369_F085; AON6284;
Introduction Date: August 27, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
N-Channel 80V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 80V 60A PPAK SO-8
MOSFET N-CH 80V 60A PPAK SO-8
MOSFET 80V Vds 20V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIR880ADP-T1-GE3 | 1096485-SIR880ADP-T1-GE3 | SIR880ADP-T1-GE3CT-ND | SIR880ADP-T1-GE3 | SIR880ADP-T1-GE3 | SIR880ADP-T1-GE3 |
| Product Name | 80V 60A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR880ADP-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 83000 milliwatts | 5400 to 83000 milliwatts | 5400 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 80 volts | 80 volts |
