Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR880ADP-T1-GE3 SIR880ADP-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1096485-SIR880ADP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Family Name: SiR880ADP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 2289pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.3 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): STL75N8LF6; FDMS86369_F085; AON6284;
Introduction Date: August 27, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 80V 60A PPAK SO-8

N-Channel 80V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8