MOSFET N-CH 100V 40A PPAK SO-8 Product overview: SIR878DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR878DP-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 133162-SIR878DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 44.5W (Tc)
Family Name: SiR878DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1250pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): SIR878BDP-T1-RE3; CSD19537Q3; CSD19537Q3T; DMT10H015LPS-13 ;
Introduction Date: April 07, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
N-Channel 100V 40A (Tc) 5W (Ta), 44.5W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 100V 40A PPAK SO-8
MOSFET N-CH 100V 40A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIR878DP-T1-GE3 | 133162-SIR878DP-T1-GE3 | SIR878DP-T1-GE3TR-ND | SIR878DP-T1-GE3 | SIR878DP-T1-GE3 |
| Product Name | 100V 40A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR878DP-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 5000 milliwatts | 5000 to 44500 milliwatts | 5000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | 1250 pF @ 50 V |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
