N-Channel Power MOSFET, 100V, 40A, 10.8mR, SOIC Product overview: SIR876ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 40A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 40A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR876ADP-T1-GE3
Manufacturer: Vishay Siliconix
Win Source Part Number: 720372-SIR876ADP-T1-
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: SiR876ADP
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 5W, 62.5W
Alternative Parts (Cross-Reference): AON6224; TPH1400ANH,L1Q(M ; TPH1400ANH; TPH1400ANH,L1Q;
Introduction Date: November 21, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 40A
Rds On (Maximum) at Id, Vgs: 10.8mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.8V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 49nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1630pF at 50V
N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
MOSFET, N CH, 100V, 40A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
MOSFET, N CH, 100V, 40A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:62.5W RoHS Compliant: Yes
100V 40A 10.8mΩ@10V,20A 5W 2.8V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS
MOSFET N-CH 100V 40A PPAK SO-8
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 100V 40A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIR876ADP-T1-GE3 | 720372-SIR876ADP-T1-GE3 | SIR876ADP-T1-GE3TR-ND | 94T2845 | 94T2846 | 17930-SIR876ADP-T1-GE3 | SIR876ADP-T1-GE3 | SIR876ADP-T1-GE3 | SIR876ADP-T1-GE3 |
| Product Name | N-Channel 100V 40A SOIC MOSFET Transistor | FETs - Single - SIR876ADP-T1-GE3 | Single FETs, MOSFETs | Mosfet, N Ch, 100V, 40A, Powerpak So-8; Channel Type Vishay | Mosfet, N Ch, 100V, 40A, Powerpak So-8, Full Reel; Channel Type Vishay | 100V 40A 10.8mΩ@10V,20A 5W 2.8V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||||
| PD | 62500 milliwatts | 5000 to 62500 milliwatts | 62500 milliwatts | 5000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 100 volts | 100 volts |
