Manufacturer: Vishay
Win Source Part Number: 211730-SIR872DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 53.7A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2130pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): FDMS86200; SiR872ADP-T1-GE3; BSC190N15NS3 G;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
150V 53.7A 18mR N-Channel MOSFET, Surface Mount Product overview: SIR872DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 150V, 53.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 150V, 53.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR872DP-T1-GE3 can be used for catalog matching and distributor lookup.
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 211730-SIR872DP-T1-GE3 | 278-SIR872DP-T1-GE3 | SIR872DP-T1-GE3TR-ND | SIR872DP-T1-GE3 | SIR872DP-T1-GE3 | SIR872DP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR872DP-T1-GE3 | N-Channel SMD 150V 53.7A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 150 volts | 150 volts | ||||
| PD | 6250 to 104000 milliwatts | 104000 milliwatts | 6250 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |