MOSFET P-CH 100V 48A PPAK SO-8
P-Channel 100V 48A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 100V 48A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 100V 48A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 933836-SIR871DP-T1-G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 100 V 48A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIR871
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIR871DP-T1-GE3-ND, SIR871DP-T1-GE3TR, SIR871DP-T1-GE3DKR, SIR871DP-T1-GE3CT
Trans MOSFET P-CH 100V 48A 8-Pin PowerPAK SO EP T/R Product overview: SIR871DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 48A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 48A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR871DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 100V 48A PPAK SO-8
MOSFET -100V Vds 20V Vgs SO-8
MOSFET, P-CH, 100V, 48A, SOIC ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIR871DP-T1-GE3 | SIR871DP-T1-GE3TR-ND | 933836-SIR871DP-T1-GE3 | 278-SIR871DP-T1-GE3 | SIR871DP-T1-GE3 | SIR871DP-T1-GE3 | 57AJ0406 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR871DP-T1-GE3 | 100V 48A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 100V, 48A, Soic Rohs Compliant Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 48000 milliamps | ||||||
| PD | 89000 milliwatts | 5200 milliwatts |