N-Channel Power MOSFET, 100V, 60A, 6mR RdsOn, SOIC Product overview: SIR870DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 60A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 60A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR870DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 60A PPAK SO-8
N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 1250016-SIR870DP-T1-
Manufacturer Homepage: www.vishay.com
Alternative Parts (Cross-Reference): BSC060N10NS3G; AON6292; SiR870DP-T1-GE3; FDMS86152;
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 60A PPAK SO-8
MOSFET, N CHANNEL, 100V, 60A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 100V, 60A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIR870DP-T1-GE3 | SIR870DP-T1-GE3 | SIR870DP-T1-GE3DKR-ND | 1250016-SIR870DP-T1-GE3 | SIR870DP-T1-GE3 | 94T2659 | 65T1670 |
| Product Name | N-Channel 100V 60A SOIC MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR870DP-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 100V, 60A, Powerpak So-8; Channel Type Vishay | Mosfet, N Channel, 100V, 60A, Powerpak So-8, Full Reel; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| PD | 104000 milliwatts | 6250 milliwatts | 104000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
