MOSFETs 25V Vds 20V Vgs PowerPAK SO-8 Product overview: SIR862DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIR862DP-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 1096483-SIR862DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 3800pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Application Field: Used in Signal Processing, Industrial
N-Channel 25V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 25V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 25V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 25V 50A PPAK SO-8
MOSFET N-CH 25V 50A PPAK SO-8
MOSFET 25V Vds 20V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SIR862DP-T1-GE3 | 1096483-SIR862DP-T1-GE3 | SIR862DP-T1-GE3CT-ND | SIR862DP-T1-GE3 | SIR862DP-T1-GE3 | SIR862DP-T1-GE3 |
| Product Name | 25V 20V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR862DP-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| PD | 69 milliwatts | 5200 to 69000 milliwatts | 5200 milliwatts | |||
| Package Type | Reel | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | 90 nC @ 10 V | SO-8; PowerPAK® SO-8 | |
| Packing Method | Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
