Vishay Precision Group Single FETs, MOSFETs SIR846DP-T1-GE3

Description
MOSFET N-CH 100V 60A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 100V 60A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIR846DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIR846DP-T1-GE3
Single FETs, MOSFETs SIR846DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8

MOSFET N-CH 100V 60A PPAK SO-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR846DP-T1-GE3 - 895068-SIR846DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR846DP-T1-GE3
895068-SIR846DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR846DP-T1-GE3 895068-SIR846DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 895068-SIR846DP-T1-G E3 Series: TrenchFET® Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 100 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8 Package: PowerPAK® SO-8 Package: Reel - TR Mounting: Surface Mount Family Name: SIR846 Categories: Discrete Semiconductor Products Case / Package: PowerPAK® SO-8 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095 Other Part Number: SIR846DPT1GE3, SIR846DP-T1-GE3CT, SIR846DP-T1-GE3TR, SIR846DP-T1-GE3DKR

Manufacturer: Vishay
Win Source Part Number: 895068-SIR846DP-T1-GE3
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIR846
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIR846DPT1GE3, SIR846DP-T1-GE3CT, SIR846DP-T1-GE3TR, SIR846DP-T1-GE3DKR

Buy Now Datasheet
Single FETs, MOSFETs - SIR846DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR846DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIR846DP-T1-GE3DKR-ND
N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR846DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR846DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR846DP-T1-GE3TR-ND
N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR846DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR846DP-T1-GE3CT-ND
Single FETs, MOSFETs SIR846DP-T1-GE3CT-ND
N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
100V 60A SOIC MOSFET Transistor
278-SIR846DP-T1-GE3
100V 60A SOIC MOSFET Transistor 278-SIR846DP-T1-GE3
N-CH MOSFET 100V 60A 7.8mR SOIC SM Product overview: SIR846DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 60A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 60A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR846DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-CH MOSFET 100V 60A 7.8mR SOIC SM Product overview: SIR846DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 60A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 60A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR846DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
N Channel Mosfet, 100V, 60A; Channel Type Vishay - 35R6201 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 60A; Channel Type Vishay
35R6201
N Channel Mosfet, 100V, 60A; Channel Type Vishay 35R6201
N CHANNEL MOSFET, 100V, 60A; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; Product Range:-RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 60A; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; Product Range:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR846DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR846DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR846DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8

MOSFET N-CH 100V 60A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 60A 104W 7.8mohm @ 10V

MOSFET 100V 60A 104W 7.8mohm @ 10V

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIR846DP-T1-GE3 895068-SIR846DP-T1-GE3 SIR846DP-T1-GE3DKR-ND 278-SIR846DP-T1-GE3 35R6201 SIR846DP-T1-GE3 SIR846DP-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR846DP-T1-GE3 Single FETs, MOSFETs 100V 60A SOIC MOSFET Transistor N Channel Mosfet, 100V, 60A; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts
IDSS 60000 milliamps 60000 milliamps
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