Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIR846BDP-T1-RE3

Description
Win Source Part Number: 1277649-SIR846BDP-T1 -RE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SIR846BDP-T1-RE3 TR,742-SIR846BDP-T1- RE3CT,742-SIR846BDP- T1-RE3DKR Base Product Number: SIR846 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Description
Win Source Part Number: 1277649-SIR846BDP-T1 -RE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SIR846BDP-T1-RE3 TR,742-SIR846BDP-T1- RE3CT,742-SIR846BDP- T1-RE3DKR Base Product Number: SIR846 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277649-SIR846BDP-T1-RE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277649-SIR846BDP-T1-RE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277649-SIR846BDP-T1-RE3
Win Source Part Number: 1277649-SIR846BDP-T1 -RE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SIR846BDP-T1-RE3 TR,742-SIR846BDP-T1- RE3CT,742-SIR846BDP- T1-RE3DKR Base Product Number: SIR846 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1277649-SIR846BDP-T1-RE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIR846BDP-T1-RE3TR,742-SIR846BDP-T1-RE3CT,742-SIR846BDP-T1-RE3DKR
Base Product Number: SIR846
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIR846BDP-T1-RE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIR846BDP-T1-RE3DKR-ND
Single FETs, MOSFETs 742-SIR846BDP-T1-RE3DKR-ND
N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIR846BDP-T1-RE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIR846BDP-T1-RE3CT-ND
Single FETs, MOSFETs 742-SIR846BDP-T1-RE3CT-ND
N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIR846BDP-T1-RE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIR846BDP-T1-RE3TR-ND
Single FETs, MOSFETs 742-SIR846BDP-T1-RE3TR-ND
N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Mosfet, N-Ch, 100V, 65.8A, 150Deg C Rohs Compliant Vishay - 64AH1458 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 65.8A, 150Deg C Rohs Compliant Vishay
64AH1458
Mosfet, N-Ch, 100V, 65.8A, 150Deg C Rohs Compliant Vishay 64AH1458
MOSFET, N-CH, 100V, 65.8A, 150DEG C ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 65.8A, 150DEG C ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR846BDP-T1-RE3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR846BDP-T1-RE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR846BDP-T1-RE3
MOSFET N-CH 100V 16.1A/65.8 PPAK

MOSFET N-CH 100V 16.1A/65.8 PPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277649-SIR846BDP-T1-RE3 742-SIR846BDP-T1-RE3DKR-ND 64AH1458 SIR846BDP-T1-RE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Mosfet, N-Ch, 100V, 65.8A, 150Deg C Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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