N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 16.1A (Ta), 65.8 (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1277649-SIR846BDP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIR846BDP-T1-RE3
Base Product Number: SIR846
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Trans MOSFET N-CH 100V 65.8A 8-Pin PowerPAK SO EP T/R Product overview: SIR846BDP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 65.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 65.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR846BDP-T1-RE3
MOSFET N-CH 100V 16.1A/65.8 PPAK
MOSFET, N-CH, 100V, 65.8A, 150DEG C ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIR846BDP-T1-RE3DKR-ND | 1277649-SIR846BDP-T1-RE3 | 278-SIR846BDP-T1-RE3 | SIR846BDP-T1-RE3 | 64AH1458 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 100V 65.8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 65.8A, 150Deg C Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | Tape and Reel | SO-8; PowerPAKR SO-8 | TO-3 |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 100 volts |
