N-CH MOSFET, 100V, 60A, 7.8mR, 83W, SMD Product overview: SIR846ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 60A, 83W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 60A, 83W, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR846ADP-T1-GE3
N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 122876-SIR846ADP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 2350pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.8 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 100V 60A PPAK SO-8
MOSFET N-CH 100V 60A PPAK SO-8
MOSFET Transistor, N Channel, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V RoHS Compliant: Yes
MOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:83W RoHS Compliant: Yes
MOSFET, N CH, 100V, 60A, POWERPAK SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; On Resistance Rds(on):0.0065ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIR846ADP-T1-GE3 | SIR846ADP-T1-GE3CT-ND | 122876-SIR846ADP-T1-GE3 | SIR846ADP-T1-GE3 | SIR846ADP-T1-GE3 | SIR846ADP-T1-GE3 | 63W4131 | 94T2842 | 94T2841 |
| Product Name | SMD 100V 60A 83W MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR846ADP-T1-GE3 | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 60 A, 100 V, 0.0065 Ohm, 10 V, 1.8 V Rohs Compliant Vishay | Mosfet, N Ch, 100V, 60A, Powerpak So-8, Full Reel; Channel Type Vishay | Mosfet, N Ch, 100V, 60A, Powerpak So-8; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 83000 milliwatts | 5400 to 83000 milliwatts | 5400 milliwatts | 83000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | Surface Mount | TO-3 | TO-3; SO-8 | TO-3; SO-8 | ||
| V(BR)DSS | 100 volts | 100 volts |
