Manufacturer: Vishay
Win Source Part Number: 138615-SIR826DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 2900pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
N-Ch MOSFET 80V 60A 4.8mR SOIC Surface Mount Product overview: SIR826DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 80V, 60A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 80V, 60A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR826DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 80V 60A PPAK SO-8
MOSFET N-CH 80V 60A PPAK SO-8
MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
MOSFET, N CH, 80V, 60A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 80V, 60A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 138615-SIR826DP-T1-GE3 | 278-SIR826DP-T1-GE3 | SIR826DP-T1-GE3CT-ND | SIR826DP-T1-GE3 | SIR826DP-T1-GE3 | SIR826DP-T1-GE3 | 94T2658 | 65T1668 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR826DP-T1-GE3 | SMD 80V 60A SOIC MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 80V, 60A, Powerpak So-8; Channel Type Vishay | Mosfet, N Channel, 80V, 60A, Powerpak So-8, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| PD | 6250 to 104000 milliwatts | 104000 milliwatts | 6250 milliwatts | 104000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
