Manufacturer: Vishay
Win Source Part Number: 895065-SIR826ADP-T1-
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 80 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIR826
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIR826ADPT1GE3, SIR826ADP-T1-GE3DKR,
N-Channel MOSFET, 80V, 60A, 5.5mR Rds(on), Surface Mount Product overview: SIR826ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 80V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 80V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR826ADP-T1-GE3
N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 80V 60A PPAK SO-8
MOSFET 80V Vds 20V Vgs PowerPAK SO-8
MOSFET Transistor, N Channel, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V RoHS Compliant: Yes
MOSFET N-CH 80V 60A PPAK SO-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 895065-SIR826ADP-T1-GE3 | 278-SIR826ADP-T1-GE3 | SIR826ADP-T1-GE3DKR-ND | SIR826ADP-T1-GE3 | SIR826ADP-T1-GE3 | 19X1950 | SIR826ADP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR826ADP-T1-GE3 | N-Channel SMD 80V 60A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 60 A, 80 V, 0.0046 Ohm, 10 V, 1.2 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; SOT3; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | ||
| PD | 104000 milliwatts | 6250 milliwatts |
